| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymer compound useful as a base resin for a resist material that is high in resolution, little in roughening of pattern side wall, has etching resistance of practical level, and has an enough latitude in temperature range for heat treatment after exposure. <P>SOLUTION: The polymer compound having an average molecular weight of 1,000 to 50,000, formed by containing one kind or more kinds of repeated units represented by the following general formulae(1) to (3), respectively, the resist material formed by containing the polymer compound, and a pattern forming method including a process for applying the resist material onto a substrate, a process for heat-treating the obtained film, a process for exposing the heat-treated film with a high energy ray or electron beam via a photomask, a process for heat-treating it after the exposure, and a process for developing it with a developing solution thereafter, are provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
