| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor and a manufacturing method thereof where no damage is caused by the implantation of contaminant ion when the contaminant ion is implanted onto an active region since the border surfaces of a field region and an active region of the image sensor are separated from each other, and further, dark currents and leakage currents caused when the border surfaces of the active region and the field region contact each other are reduced. SOLUTION: The CMOS image sensor comprises a photodiode and a reset transistor. When a contaminant ion is implanted onto the active region between the gate electrode of the reset transistor and the field region, no contaminant ion is implanted since the border surfaces of the field region and the active region are separated from each other. COPYRIGHT: (C)2005,JPO&NCIPI
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