发明名称 |
Method and system for temperature compensation for memory cells with temperature-dependent behavior |
摘要 |
The preferred embodiments described herein relate to a method and system for temperature compensation for memory cells with temperature-dependent behavior. In one preferred embodiment, at least one of a first temperature-dependent reference voltage comprising a negative temperature coefficient and a second temperature-dependent reference voltage comprising a positive temperature coefficient is generated. One of a wordline voltage and a bitline voltage is generated from one of the at least one of the first and second temperature-dependent reference voltages. The other of the wordline and bitline voltages is generated, and the wordline and bitline voltages are applied across a memory cell. Other methods and systems are disclosed for sensing a memory cell comprising temperature-dependent behavior, and each of the preferred embodiments can be used alone or in combination with one another.
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申请公布号 |
US2005078537(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20030676862 |
申请日期 |
2003.09.30 |
申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
SO KENNETH;FASOLI LUCA;KLEVELAND BENDIK |
分类号 |
G11C7/04;(IPC1-7):G11C7/04 |
主分类号 |
G11C7/04 |
代理机构 |
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主权项 |
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地址 |
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