发明名称 |
Method for producing silicon epitaxial wafer |
摘要 |
When manufacturing a silicon epitaxial wafer by forming a silicon epitaxial layer through vapor phase growth on a front surface of a semiconductor substrate W with a CVD oxide film formed on a rear surface thereof, there is used a susceptor (20) where a pocket (21) inside which the semiconductor substrate W is disposed is formed and at least one pore (22) which passes through the susceptor (20) to a rear surface thereof and is open even during the vapor phase growth is formed in a more central position than that of an outermost peripheral portion inside the pocket (21), and the semiconductor substrate W is disposed such that the CVD oxide film faces the at least one pore (22), thus forming the silicon epitaxial layer on the front surface of the semiconductor substrate W through the vapor phase growth.
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申请公布号 |
US2005079690(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20040505025 |
申请日期 |
2004.08.19 |
申请人 |
SUKA AKIHIKO;NAKASUGI TADASHI;ARAI TAKESHI |
发明人 |
SUKA AKIHIKO;NAKASUGI TADASHI;ARAI TAKESHI |
分类号 |
H01L21/205;C23C16/458;C30B25/02;C30B25/12;C30B29/06;(IPC1-7):C30B1/00;H01L21/20;H01L21/36 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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