SEMICONDUCTOR DEVICE FOR EMITTING LIGHT

摘要

The inventive semiconductor device for emitting light when a voltage is applied comprises a first (3), second (5) and third active semiconductor area (7A-7C). The conductivity of the first semiconductor area (3) is based on charge carriers of a first type of conductivity. The conductivity of the second semiconductor area (5) is based on charge carriers of a second type of conductivity whereby the charge thereof is opposite to that of the charge carriers of the first type of conductivity. The active semiconductor area (5 13) is arranged between the first and second semiconductor area (3, 5). Quantum structures (13) are embedded in the active semiconductor area (5) and are made of a semiconductor material which has a direct band gap. The quantum structures are structures whose dimension in at least one direction of expansion is small enough such that the properties of the structure can be substantially influenced by quantum mechanical processes.