| 发明名称 |
A SEMICONDUCTOR DEVICE HAVING A NICKEL/COBALT SILICIDE REGION FORMED IN A SILICON REGION |
| 摘要 |
<p>By forming a buried nickel silicide layer (260A) followed by a cobalt silicide layer (261A) in silicon containing regions, such as a gate electrode of a field effect transistor, the superior characteristics of both silicides may be combined so as to provide the potential for further device scaling without unduly compromising the sheet resistance and the contact resistance of scaled silicon circuit features.</p> |
| 申请公布号 |
WO2005034225(A1) |
申请公布日期 |
2005.04.14 |
| 申请号 |
WO2004US31037 |
申请日期 |
2004.09.17 |
| 申请人 |
ADVANCED MICRO DEVICES, INC.;KAMMLER, THORSTEN;WIECZOREK, KARSTEN;FRENKEL, AUSTIN |
发明人 |
KAMMLER, THORSTEN;WIECZOREK, KARSTEN;FRENKEL, AUSTIN |
| 分类号 |
H01L21/28;H01L21/285;H01L21/336;(IPC1-7):H01L21/285 |
主分类号 |
H01L21/28 |
| 代理机构 |
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