| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive photoresist composition for improving the performance of essential micro-photofabrication using far UV light, in particular, ArF excimer laser light, and also to provide a positive photoresist composition for exposure to far UV rays which suppresses pattern collapse or LER (line edge roughness). <P>SOLUTION: The positive resist composition contains: (A) a resin having a repeating unit (A1) having an alicyclic lactone structure, a repeating unit (A2) containing a specified structure, and a repeating unit (A3) having a group which is decomposed by the effect of an acid, with the solubility rate of the resin with an alkaline developing solution increased by the effect of an acid; (B) a compound which generates an acid by irradiation of active rays or radiation; and (C) solvent. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
