| 摘要 |
PROBLEM TO BE SOLVED: To provide new bismuth compounds which excel in vaporization properties and heat stability in forming a film by the CVD method, its manufacturing method, and a film-forming method. SOLUTION: The bismuth compounds are represented by formula 1, formula 5 and formula 9 (wherein R<SP>1</SP>and R<SP>7</SP>are each a lower alkyl group; R<SP>2</SP>, R<SP>8</SP>, R<SP>12</SP>and R<SP>13</SP>are each a lower alkyl group, a lower alkoxy group or the like; m is a number of substituent R<SP>12</SP>of 0-5; n<SP>1</SP>, n<SP>2</SP>, and n<SP>3</SP>are numbers of substituents R<SP>2</SP>, R<SP>8</SP>, and R<SP>13</SP>of 0-4, respectively; R<SP>3</SP>to R<SP>6</SP>, R<SP>9</SP>to R<SP>11</SP>, R<SP>14</SP>, and R<SP>15</SP>are each hydrogen, a lower alkyl group or the like, provided that a combination of specific substituents is excluded), and its manufacturing method and the film-forming method are disclosed. COPYRIGHT: (C)2005,JPO&NCIPI
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