VERTICAL SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a structure which accomplishes a small and sufficient breakdown voltage and on-resistance characteristics in a high voltage resistant semiconductor device in which a n-type column region and a p-type column region are arranged on a semiconductor device alternately. SOLUTION: In a vertical MOSFET_(metal oxide semiconductor field effect transistor) element which has a super junction structure where the n-type column region and the p-type column region are arranged alternately, the end portion of the column region is located at a position where the distance between an end of an active region and the end region of the column region is by a length of the 1/2 width of the n-type column region shorter than a distance corresponding to a depth from the active region end portion to the column region. Thereby, An electric field concentration in a particular position in a region facing the short side of the column structure is prevented, and the voltage resistance of the vertical MOSFET is improved. COPYRIGHT: (C)2005,JPO&NCIPI