| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of defects in a selenium-based amorphous semiconductor film due to the multilayer structure of a common electrode for applying bias voltage, and to increase the adhesiveness of the common electrode. SOLUTION: In the radiation detector, the common electrode 2 for applying bias voltage which is formed in a multilayered structure on the surface of the selenium-based amorphous semiconductor film (a-Se-based semiconductor film) 1 sensitive to radiation is a metal film having a thickness in the range between 100Åand 1,000Å, and so the evaporation temperature at the time of laminating the metal film for the common electrode 2 on the surface of the a-Se-based semiconductor film 1 is relatively low and the evaporation time is short, resulting in suppressing the occurrence of defects in the a-Se-based semiconductor film 1 due to the multilayered structure of the common electrode 2. Unlike the conventional thick metal film, the metal film for the common electrode 2 is a thin film having a thickness of 1,000Åor less, resulting in an increase in adhesiveness of the common electrode 2 with respect to the a-Se-based semiconductor film 1. COPYRIGHT: (C)2005,JPO&NCIPI
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