METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To make a laser beam irradiation using a material different with a prior mask and construction for selective irradiation with the laser beam using the laser beam having a laser beam output power over a wide range. SOLUTION: The invention is to form the mask which reflects the laser beam and to irradiate selectively the laser beam. The mask is made of a laminated film that is a laminate of at least a first material and a second material. An amorphous semiconductor film, the first material, and the second material are stacked in this order for irradiation with the laser beam from one side of a substrate, where the refractive index of the first material is n1, the refractive index of the second material is n2, and n1