| 摘要 |
The invention concerns a polymorphous material of formula (I) SiXGeyCZXk: H, wherein: x is such that 0 = x, preferably 0 < x; y is such that 0 = y, preferably 0 < y; z is such that 0 = z, preferably 0 < z; k > 0; - x + y + z > 0; and X is selected among He, C, elements of the third column of the periodic table, such as B, Al, Ga, and In; elements of the fifth column of the periodic table, such as N, P, As, Sb; O; halides, such as F Cl, and Br; Ti; lanthanides and actinides; and mixtures thereof. Preferably, X is C. The invention also concerns a microelectronic, optoelectronic device, sensor or imager comprising said polymorphous material. The invention also concerns a method for preparing said material. |
