发明名称 Wafer level package type film bulk acoustic resonator device for wireless communication device, has internal electrodes provided on substrate as external electrodes without separately processing external electrodes
摘要 The device (50) has external electrodes (49) formed on an upper surface of a substrate, coming into contact with opposite edges of the surface. Internal electrodes (48) are formed to come into contact with a piezoelectric layer for performing electrical signal input and output functions. The internal electrodes are provided on the substrate as the external electrodes without separately processing the external electrodes. An independent claim is also included for a method for manufacturing a wafer level package type film bulk acoustic resonator device.
申请公布号 DE102004001892(A1) 申请公布日期 2005.04.14
申请号 DE20041001892 申请日期 2004.01.14
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KWON, JONG OH
分类号 H01L23/02;B81B7/00;H03H3/02;H03H9/10;H03H9/17;H03H9/24 主分类号 H01L23/02
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