ZNO/CU(INGA)SE2 SOLAR CELLS PREPARED BY VAPOR PHASE ZN DOPING
摘要
<p>A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100 °C to about 250 °C; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.</p>
申请公布号
WO2005034247(A1)
申请公布日期
2005.04.14
申请号
WO2003US27608
申请日期
2003.09.03
申请人
MIDWEST RESEARCH INSTITUTE;RAMANATHAN, KANNAN;HASOON, FALAH, S.;ASHER, SARAH, E.;DOLAN, JAMES;KEANE, JAMES, C.
发明人
RAMANATHAN, KANNAN;HASOON, FALAH, S.;ASHER, SARAH, E.;DOLAN, JAMES;KEANE, JAMES, C.