发明名称 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING PATTERN BY USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition which can keep a wide process window in the process of forming an isolated groove (trench) pattern and a dense trench pattern, and to provide a method for forming a pattern by using the composition. <P>SOLUTION: The positive resist composition contains: (A) a resin having a specified repeating unit having a norbornane lactone structure and having the solubility with an alkaline developing solution increased by the effect of an acid; (B) a compound which generates specified sulfonic acid by irradiation of active rays or radiation; and (C) solvent. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005099456(A) 申请公布日期 2005.04.14
申请号 JP20030333504 申请日期 2003.09.25
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO
分类号 G03F7/039;C08F220/00;G03F7/004;H01L21/027 主分类号 G03F7/039
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