MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE, AND OPTICAL SWITCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent side etching at both longitudinal ends of a plate-like structure to carry out integration. SOLUTION: A semiconductor substrate (a silicon substrate) is wet-etched to form the plate-like structure with the side faces formed as (111) faces almost perpendicular to the main surface of the substrate. At this time, etching is performed to form compensation parts 22 at both longitudinal ends of the plate-like structure. The compensation part is composed of an extended part 23 extending each end of the plate-like structure, and a (111) face structure part 24 extending in a (111) face direction intersecting the plate-like structure. Side etching occurs at the (111) face structure part. There is therefore no need to take side etching into consideration when setting the length of the plate-like structure. The formed plate-like structure is used as a mirror in an optical switching device. COPYRIGHT: (C)2005,JPO&NCIPI