发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which first and second conductive films are surely connected electrically to each other through a connecting through-hole formed in an insulating film, and the manufacturing cost of a semiconductor device is reduced by far improving the utilizing efficiency of a liquid material used for forming the second conductive film. SOLUTION: The method of manufacturing the semiconductor device includes: an insulating film forming step ST1 of forming the insulating film on the first conductive film and, at the same time, the contact hole reaching the first conductive film through the insulating film; a liquid repellent area forming step ST2 of forming a patterned liquid repellent film on the insulating film; a liquid material arranging step ST3 of arranging the liquid material in an area on the insulating film including the contact hole; a drying step ST4 of forming the second conductive film partially embedded in the contact hole, by drying and solidifying the liquid material; and a liquid repellent film removing step ST5 of removing the liquid repellent film. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005101559(A) 申请公布日期 2005.04.14
申请号 JP20040237564 申请日期 2004.08.17
申请人 SEIKO EPSON CORP 发明人 SATO MITSURU;YUDASAKA KAZUO
分类号 G02F1/1368;H01L21/02;H01L21/288;H01L21/336;H01L21/768;H01L29/786;H01L51/50;H05B33/14;(IPC1-7):H01L21/288;G02F1/136 主分类号 G02F1/1368
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