发明名称 SEMICONDUCTOR CIRCUIT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device in which a low impedance characteristic required for a decoupling circuit can be ensured at frequencies up to several hundred MHz, or up to several tens of GHz or more. SOLUTION: In a semiconductor circuit in which a power source wiring 5 and a ground wiring 3 are arranged so as to be opposed to each other, relating to a part of each opposed wirings 3, 5, the ground wiring 3 has protrusions which form a comb shape viewing from a vertical face in the direction of transmission and extend in the direction of transmission, and the power source wiring 5 also has protrusions which form a comb shape viewing from the vertical face in the direction of transmission and extend in the direction of transmission. Both are combined with each other through an insulating film 4 having the same thickness. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005101649(A) 申请公布日期 2005.04.14
申请号 JP20040336921 申请日期 2004.11.22
申请人 NEC CORP 发明人 NAKANO TAKASHI;TOYA HIROKAZU
分类号 H01L27/04;H01L21/822;(IPC1-7):H01L21/822 主分类号 H01L27/04
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