SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To form a polycrystalline semiconductor film having a larger particle diameter by using a material with a larger thermal conductivity as the base film for the semiconductor film when the semiconductor film is irradiated with a laser beam to crystallize it to make the lateral growth distance due to the melt recrystallization of the semiconductor film obtained by one pulse irradiation with the laser beam larger. SOLUTION: This semiconductor device comprises the base film formed on the substrate and the polycrystalline semiconductor film laminated on the base film. The base film has a thermal conductivity not less than ten times that of the substrate, and the polycrystalline semiconductor film is formed by irradiating an amorphous or microcrystalline semiconductor film laminated on the base film with a laser beam to polycrystallize it. COPYRIGHT: (C)2005,JPO&NCIPI