发明名称 |
SACRIFICIAL SURFACTANATED PRE-WET FOR DEFECT REDUCTION IN A SEMICONDUCTOR PHOTOLITHOGRAPHY DEVELOPING PROCESS |
摘要 |
A method and apparatus for developing a resist on a substrate in which a sacrificial surfactant-containing liquid is first applied to a resist as a pretreatment to reduce developing process defects and to improve the development process time and the uniformity of the resist. The pretreatment is followed by supplying a developing solution to the resist and thereafter developing the resist. |
申请公布号 |
WO2005034211(A2) |
申请公布日期 |
2005.04.14 |
申请号 |
WO2004US32171 |
申请日期 |
2004.09.30 |
申请人 |
TOKYO ELECTRON LIMITED;TOKYO ELECTRON AMERICA, INC.;KULP, JOHN, M. |
发明人 |
KULP, JOHN, M. |
分类号 |
G03F7/30;G03F7/32 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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