发明名称 SACRIFICIAL SURFACTANATED PRE-WET FOR DEFECT REDUCTION IN A SEMICONDUCTOR PHOTOLITHOGRAPHY DEVELOPING PROCESS
摘要 A method and apparatus for developing a resist on a substrate in which a sacrificial surfactant-containing liquid is first applied to a resist as a pretreatment to reduce developing process defects and to improve the development process time and the uniformity of the resist. The pretreatment is followed by supplying a developing solution to the resist and thereafter developing the resist.
申请公布号 WO2005034211(A2) 申请公布日期 2005.04.14
申请号 WO2004US32171 申请日期 2004.09.30
申请人 TOKYO ELECTRON LIMITED;TOKYO ELECTRON AMERICA, INC.;KULP, JOHN, M. 发明人 KULP, JOHN, M.
分类号 G03F7/30;G03F7/32 主分类号 G03F7/30
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