发明名称 |
SUPPORTING TOOL FOR HEAT TREATMENT, HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD, METHOD OF MANUFACTURING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a supporting tool for heat treatment, a heat treatment apparatus, a heat treatment method, a method of manufacturing substrate, and a method of manufacturing semiconductor device for manufacturing high quality semiconductor device and substrate, by controlling the occurrence of slip dislocation fault of substrate caused during the heat treatment and the occurrence of damage at the rear surface of the substrate. SOLUTION: In the supporting tool for heat treatment 30 to support substrates 68, a supporting portion 58 which is in contact with the substrate 68 of the supporting tool 30 is formed of a partly cutout ring type member to support the part of 2/3 or more of the region at 5 mm or less from the edge of the substrate 68. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005101161(A) |
申请公布日期 |
2005.04.14 |
申请号 |
JP20030331414 |
申请日期 |
2003.09.24 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
TANIYAMA TOMOSHI;IZUMI MANABU |
分类号 |
H01L21/683;H01L21/22;H01L21/31;H01L21/324;H01L21/68;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/683 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|