| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a film-forming composition having low dielectric constant and excellent in chemical liquid resistance and insulating properties, a film-forming composition obtained by the method and a film-forming material. SOLUTION: The method for producing a film-forming composition comprises hydrolyzing and condensing (A) at least one kind of silane compound selected from (A-1) a compound represented by following general formula (1), (A-2) a compound represented by following general formula (2), and (A-3) a compound represented by following general formula (3), R<SB>a</SB>Si(OR<SP>1</SP>)<SB>4-a</SB>(1), Si(OR<SP>2</SP>)<SB>4</SB>(2), R<SP>3</SP><SB>b</SB>(R<SP>4</SP>O)<SB>3-b</SB>Si-(R<SP>7</SP>)<SB>d</SB>-Si(OR<SP>5</SP>)<SB>3-c</SB>R<SP>6</SP><SB>c</SB>(3), and (B) a cyclic silane compound represented by following general formula (4), in the presence of (C) a basic compound. COPYRIGHT: (C)2005,JPO&NCIPI
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