发明名称 |
Method for correcting local loading effects in the etching of photomasks |
摘要 |
A method for correcting local loading-effects in photomask etching includes the steps of determining the location-dependent density of structures of a mask; determining the location-dependent strength of the loading effect with the aid of the structure density; and determining location-dependent correction values for the mask structures with the aid of the strength of the loading effect for the purpose of compensating the loading effect. It is recognized that the strength of location-dependent loading effects can be predicted with the aid of the location-dependent structure density and therefore compensated.
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申请公布号 |
US2005079425(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20030621535 |
申请日期 |
2003.07.17 |
申请人 |
BLOCKER MARTIN;BALLHORN GERD;SCHNEIDER JENS |
发明人 |
BLOCKER MARTIN;BALLHORN GERD;SCHNEIDER JENS |
分类号 |
G03F1/00;G03F1/14;G03F1/36;G03F9/00;G06F17/50;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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