| 发明名称 |
METHOD FOR THE PRODUCTION OF A HARD MASK AND HARD MASK ARRANGEMENT |
| 摘要 |
According to the inventive method, a hard mask layer is applied to a structured photoresist layer by means of an atomic layer deposition process, and a portion of the hard mask layer is removed such that a corresponding portion of the structured photoresist layer is exposed. Said exposed portion is then removed. |
| 申请公布号 |
WO2005034215(A1) |
申请公布日期 |
2005.04.14 |
| 申请号 |
WO2004DE02185 |
申请日期 |
2004.09.30 |
| 申请人 |
INFINEON TECHNOLOGIES AG;FEHLHABER, RODGER;TEWS, HELMUT |
发明人 |
FEHLHABER, RODGER;TEWS, HELMUT |
| 分类号 |
H01L21/033 |
主分类号 |
H01L21/033 |
| 代理机构 |
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代理人 |
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| 主权项 |
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