| 摘要 |
Apparatus and methods to compensating for radial non-uniformities in the plasma sheath (42) at a substrate (12) held by an electrostatic chuck (30) in a plasma processing system (10). The substrate (12) is held by a substrate-supporting surface (36) of the electrostatic chuck (30). The substrate-supporting surface (36) is modified by providing a pattern of features (52, 60, 70, 82, 88, 100, 110, 124) characteristic of a compensating structure that corrects the radial non-uniformities in the plasma sheath (42) and then covering the features (52, 60, 70, 82, 88, 100, 110, 124) conformally with a planarization coating (34, 58, 72, 84, 90, 102, 114, 126) of a dielectric material. Thedielectric material fills and covers the pattern of features (52, 60, 70, 82, 88, 100, 110, 124) to provide multiple parallel capacitances defining the compensating structure. The pattern of features (52, 60, 70, 82, 88, 100, 110, 124) characterizing the compensating structure may be determined from a radial non-uniformity in a plasma-related parameter at the substrate-supporting surface (36). |
