发明名称 Field effect transistor junction system includes drain electrode with drain zones, gate electrode and channel zone, used in semiconductor technology
摘要 <p>A field effect transistor junction (JFET) with a semiconductor body (2, 3) of first (n) conduction type has a first main surface and second main surface opposite to it, a drain electrode (D) with drain zones, a source electrode (S) with source zones, a gate electrode (G) between the source and drain zones, and a channel zone. The source electrode also has regions of a different conduction type, so that a pn-transition is obtained between the source and drain electrodes.</p>
申请公布号 DE10344038(A1) 申请公布日期 2005.04.14
申请号 DE2003144038 申请日期 2003.09.23
申请人 INFINEON TECHNOLOGIES AG 发明人 TIHANYI, JENOE
分类号 H01L27/098;H01L29/06;H01L29/808;(IPC1-7):H01L29/808;H01L21/337 主分类号 H01L27/098
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