| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor optoelectronic waveguide with an nin type heterostructure performing stable operation of an optical modulator. <P>SOLUTION: On the top and bottom surfaces of a core layer 11 whose structure is so determined that electrooptic effect effectively operates at an operating light wavelength and light absorption causes no problem, intermediate clad layers (12-1 and 12-2) having band gaps larger than the band gap of the core layer 11 are provided so that carriers generated by the light absorption are not trapped by a heterointerfacce, and clad layers 13-1 and 13-2 having band gaps larger than those intermediate clad layers are provided on the top surface of the intermediate clad layer 12-1 and the bottom surface of the intermediate clad layer 12-2 respectively. On the top surface of the clad layer 13-1, a p-type layer 15 and an n-type layer 16 are laminated in order, and in the range of an applied voltage used in an operation state, the entire area of the p-type layer 15 and a partial or the entire area of the n-type layer 16 are depleted. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
