| 摘要 |
PROBLEM TO BE SOLVED: To provide a distorted Si channel MOS transistor which includes a partial SOI structure and does not arrange an insulating layer just under the channel. SOLUTION: The semiconductor device includes a MOS transistor in which a source/drain region and a gate electrode are formed on a silicon substrate via an intermediate layer. The intermediate layer is formed of an SiGe (silicon germanium) layer and an insulating layer which are in contact with the silicon substrate. The SiGe layer and the insulating layer are substantially connected at the surface. The gate electrode is provided on a distorted Si (silicon) layer extended to the surface of the insulating film from the SiGe layer surface, while the source-drain region is formed at least partially in the region overlapping on the insulating film among the distorted Si layer. COPYRIGHT: (C)2005,JPO&NCIPI
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