| 摘要 |
PROBLEM TO BE SOLVED: To provide the independent substrate of a III-V group nitride semiconductor having a sufficiently thick surface layer whose dislocation density is low, and whose carrier concentration variation is small and a method for manufacturing it. SOLUTION: This III-V group nitride semiconductor substrate is constituted of a first layer where a plurality of regions whose carrier concentration is different from the periphery exist in a direction which is almost perpendicular to the substrate surface and a second layer which is at least 10μm deep from the surface. Any area whose carrier concentration is different is not substantially formed in the second layer so that the carrier concentration can be substantially made uniform. COPYRIGHT: (C)2005,JPO&NCIPI
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