PROCESS AND EQUIPMENT FOR LASER ANNEALING SEMICONDUCTOR FILM

摘要

PROBLEM TO BE SOLVED: To provide a process and equipment for crystallizing a semiconductor film, especially the amorphous film of a silicon film, formed on a glass substrate by irradiating the silicon film with a laser beam having partial translucency in which variation in grain size distribution occurring in the semiconductor crystal film due to the laser beam penetrated the glass substrate and reflected from the rear surface thereof can be suppressed as much as possible. SOLUTION: A semiconductor film is irradiated with a laser beam having an elongated rectangular cross-section projected from a laser light source by a laser optical system and traveling in the direction substantially perpendicular to the longitudinal direction thereof. An irradiation angle is provided in order to incline the irradiation optical axis of the irradiation beam projected to the semiconductor film in the scanning direction against the direction normal to the glass substrate or in the opposite direction. A part of the irradiation beam penetrating the semiconductor film and reflecting from the rear surface of the glass substrate toward the semiconductor film is thereby separated substantially from the irradiation beam. COPYRIGHT: (C)2005,JPO&NCIPI