SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To realize mixed loading of an MOSFET with an epitaxial channel structure and an MOSFET with an elevated source drain structure. SOLUTION: The gate electrode 17 of the MOSFET with an elevated source drain structure is formed, and then an epitaxial channel formation area 34 and an elevated source drain formation area 35 are made open to form openings, and furthermore, crystal growth is performed. Thus, a manufacturing process can be simplified. COPYRIGHT: (C)2005,JPO&NCIPI