发明名称 |
NITRIDE SEMICONDUCTOR; LIGHT-EMITTING DEVICE, LIGHT-EMITTING DIODE, LASER DEVICE AND LAMP USING THE SEMICONDUCTOR; AND PRODUCTION METHODS THEREOF |
摘要 |
ABSTRACT An object of the present invention is to provide a nitride semiconductor product which causes no time-dependent deterioration in reverse withstand voltage and maintains a satisfactory initial reverse withstand voltage. The inventive nitride semiconductor product comprises an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order, the light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer, wherein each barrier layer comprises a barrier sublayer C which has been grown at a temperature higher than a growth temperature of the well layer, and a barrier sublayer E which has been grown at a temperature lower than a growth temperature of the barrier sublayer C, and the barrier sublayer C is disposed closer to the substrate with respect to the barrier sublayer E. |
申请公布号 |
WO2005034253(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
WO2004JP14873 |
申请日期 |
2004.10.01 |
申请人 |
SHOWA DENKO K.K.;KOBAYAKAWA, MASATO;TOMOZAWA, HIDEKI;OKUYAMA, MINEO |
发明人 |
KOBAYAKAWA, MASATO;TOMOZAWA, HIDEKI;OKUYAMA, MINEO |
分类号 |
H01L33/00;H01L33/06;H01L33/32;H01S5/30;H01S5/34;H01S5/343 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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