| 摘要 |
1,107,685. Gunn effect devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 4 Nov., 1966 [16 Dec., 1965] No. 49653/66 Heading H1K. A Gunn effect element is cooled by providing at least one opening or passage through the substrate on which the element is mounted and/ or through a body of high thermal conductivity in good heat transfer relation with the substrate. The passage may be filled with a material of high thermal conductivity such as a metal or an oxide of beryllium, aluminium or magnesium, or a liquid or gas may be circulated therethrough. In one embodiment the substrate consists of a hollow tube having a thin layer of III-V semi-conductor material on its outer surface to constitute the Gunn element, and annular electrodes are provided at each end of the element. In a second embodiment the element and substrate are planar and the substrate is mounted on a massive base of thermally conductive material through which cooling passages extend. |
