| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of efficiently writing/erasing data. <P>SOLUTION: This EEPROM is provided with a memory cell array 101 in which electrically rewritable memory cells are arrayed in a matrix, a sense amplifier 102 serving for data latch, a row decoder 106, a column decoder 107, a booster circuit 109 or the like controlled by a control circuit 108 to generate a boosting voltage for data writing or the like, and repeats data writing and its subsequent verification reading operation. In the EEPROM, a first writing operation is started after the output of the booster circuit 109 reaches a predetermined level. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
