| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic device in which output characteristics are not lowered even by a continuous production, while maintaining the high output characteristics. <P>SOLUTION: A p-type amorphous silicon film 3 and a surface electrode 4 are formed successively on an i-type amorphous silicon film 2. The p-type silicon film 3 has a low-doped layer 31 to which p-type impurities are doped in a low concentration, a high-doped layer 32 to which p-type impurities are doped in a high concentration, and the low-doped layer 33 to which p-type impurities are doped in the low concentration successively from the i-type amorphous silicon film 2 side. Accordingly, a three-layer structure is formed in which the high-doped layer 32 is sandwiched between the low-doped layers 31 and 33. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
