发明名称 Method of fabricating multi layer devices on buried oxide layer substrates
摘要 A method for fabricating multi layer devices on a substrate with a buried oxide layer is disclosed. Multi layer microelectromechanical, microfluidic, and integrated circuit devices are fabricated on a substrate with layers of predetermined weak and strong bond regions with deconstructed layers of devices at or on the weak bond regions. The layers are then peeled and subsequently bonded to produce a multi layer microelectromechanical and microfluidic devices. An arbitrary number of layers can be bonded and stacked to create either microelectromechanical or microfluidic device or a hyrbid type of device.
申请公布号 US2005079664(A1) 申请公布日期 2005.04.14
申请号 US20030719663 申请日期 2003.11.20
申请人 FARIS SADEG M. 发明人 FARIS SADEG M.
分类号 B81C1/00;G01R31/01;H01L21/66;(IPC1-7):H01L21/823 主分类号 B81C1/00
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