| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma producing apparatus capable of high-speed wafer processing with no contamination. SOLUTION: A gas is jetted onto a wafer surface by a discharge chamber 7, a magnetron 1 for producing plasma in the discharge chamber, a waveguide, solenoid coils 10 and 11, a quartz plate 9 for supplying microwaves to the discharge chamber 7, a space for storing gas in the quartz plate 9, and a quartz plate 18 having a gas supply port 17 which is smaller than or equal to a quarter of the maximum diameter of the discharge chamber. COPYRIGHT: (C)2005,JPO&NCIPI
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