| 摘要 |
PROBLEM TO BE SOLVED: To raise the integration degree, lower the on-resistance, reduce the switching loss and raise the speed of a semiconductor device with a lateral IGBT (insulated gate type bipolar transistor), and to prevent a malfunction such as latch up, in a constitution of the IGBT integrated with the other IGBT or a CMOS device, etc. SOLUTION: Island element forming regions 104 are formed with trench-isolated regions 105 having an insulation film 107 formed inside isolation trenches 106 on an SOI board 100 composed of a support board 102, an oxide film 103 and a p<SP>lang=EN-US></SP>-semiconductor layer 101. In the element forming region 104 a trench 202 is formed to form a gate electrode 204 through a gate insulation film 203 in the trench 202. A collector region 209 is formed on the bottom of the trench 202 and an emitter region 211 is formed outside the trench 202. COPYRIGHT: (C)2005,JPO&NCIPI
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