| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element for oscillating in a short wavelength range. SOLUTION: The nitride semiconductor laser element comprises, on a substrate: an n-type cladding layer and an n-type optical-guide layer both composed of a nitride semiconductor containing Al; an active layer composed of a nitride semiconductor containing In and Al and having a quantum-well structure with a well layer; and a p-type optical-guide layer and a p-type cladding layer both composed of a nitride semiconductor containing Al, wherein the well layer of the active layer is composed of Al<SB>x</SB>In<SB>y</SB>Ga<SB>1-x-y</SB>N (0.02≤x≤0.05, 0.005≤y≤0.03, x+y<1); a first barrier layer and a second barrier layer, which interpose the active layer, are composed of Al<SB>u</SB>Ga<SB>1-u</SB>N (0.10≤u≤0.17); and the film thickness of the well layer is larger than those of the barrier layers. COPYRIGHT: (C)2005,JPO&NCIPI
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