| 摘要 |
PROBLEM TO BE SOLVED: To form a high dielectric constant film that has little impurity content. SOLUTION: On a sublayer substrate, a first insulating film is formed, on which a second insulating film is formed that has a higher dielectric constant than the first one. After that, a gate electrode is formed on the second insulating film. Here, when forming the second insulating film, a cycle is repeated that consists of six steps, the six steps of supplying to a deposition system deposition materials for the second insulating film, purging the deposition materials supplied into the deposition system, supplying oxidizer for oxidizing the deposition materials, purging the oxidizer, supplying active species produced by generating a reduced gas plasma, and purging excessive active species. COPYRIGHT: (C)2005,JPO&NCIPI
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