| 摘要 |
PROBLEM TO BE SOLVED: To form a sputtering target of an Mo-W alloy system of higher density by sintering at a relatively low temperature and to attain further lower resistance of an alloy film deposited by using the same. SOLUTION: The sputtering target 2 is composed of an Mo-W-Al material having a composition containing Al ranging from 0.1 to 50mass% and the balance substantially a Mo-W alloy. The Mo-W alloy has the composition containing, for example, W ranging from 0.1 to 70mass% and the balance substantially Mo. COPYRIGHT: (C)2005,JPO&NCIPI
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