发明名称 |
Forming of the last metallization level of an integrated circuit |
摘要 |
An integrated circuit including one or several metallization levels, metal conductive strips and metal contact pads being formed on the last metallization level, the last level being covered with a passivation layer in which are formed openings above the contact pads. The thickness of the pads, at least at the level of their portions not covered by the passivation layer, is smaller than the thickness of said conductive strips.
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申请公布号 |
US2005077626(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20040791136 |
申请日期 |
2004.03.02 |
申请人 |
SEILLER JACKY;REVEL JEAN-FRANCOIS;DOUCE CLAUDE |
发明人 |
SEILLER JACKY;REVEL JEAN-FRANCOIS;DOUCE CLAUDE |
分类号 |
H01L23/485;H01L23/522;H01L23/528;(IPC1-7):H01L21/44;H01L23/48;H01L29/40 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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