发明名称 |
ETCH BACK PROCESS USING NITROUS OXIDE |
摘要 |
A method for generating an organic plug within a via is described. The via resides in an integrated circuit (IC) structure having a silicon containing dielectric material. The method for generating the organic plug includes applying an organic compound such as a bottom antireflective coating. The organic compound occupies the via. The method then proceeds to feed a nitrous oxide (N2O) gas into a reactor and generates a plasma in the reactor. A significant portion of the organic compound is removed leaving behind an organic plug to occupy the via. The organic plug is typically generated during dual damascene processing.
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申请公布号 |
US2005079704(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20030680894 |
申请日期 |
2003.10.08 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
ZHU HELEN;ANNAPRAGADA RAO |
分类号 |
H01L21/027;H01L21/311;H01L21/768;(IPC1-7):H01L21/823;H01L21/476 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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