Method of dividing circuit pattern, method of manufacturing stencil mask, stencil mask and method of exposure

摘要

A method of dividing a circuit pattern for creating complementary stencil masks corresponding to complementary patterns, the method comprising a step of dividing a circuit pattern into a plurality of complementary patterns including a first complementary pattern comprising a pattern of a cantilevered beam member having a support portion width W1 and a length L1, and a second complementary pattern comprising a pattern of a both end-supported beam member having a support portion width W2 and a length L2. The dividing of the circuit pattern is performed in a manner that a aspect ratio A1 (L1/W1) of the pattern of the cantilevered beam member is confined to not more than 100, and that a aspect ratio A2 (L2/W2) of the pattern of the both end-supported beam member is confined to not more than 150.