发明名称 |
Semiconductor device having heat radiation plate and bonding member |
摘要 |
A semiconductor device includes a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold. The heat radiation block has a thickness in a range between 0.5 mm and 1.5 mm. The semiconductor device has high reliability of the bonding member. |
申请公布号 |
US2005077617(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20040895947 |
申请日期 |
2004.07.22 |
申请人 |
DENSO CORPORATION |
发明人 |
HIRANO NAOHIKO;KATO NOBUYUKI;MAMITSU KUNIAKI;NAKASE YOSHIMI |
分类号 |
H01L21/60;H01L23/00;H01L23/36;H01L23/42;H01L23/433;H01L23/492;H01L23/58;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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