| 摘要 |
A method for removing selectively a nitride layer is provided to prevent circular defects and contaminations by selectively removing the nitride layer using an oxide layer as an etch barrier layer. A semiconductor substrate(21) having bit lines(27) is prepared. A nitride layer is deposited on the substrate by LPCVD(Low Pressure Chemical Vapor Deposition) and etched by blanket etching, thereby forming a niride spacer(28) at both sidewalls of the bit line. An HDP(High Density Plasma) oxide layer(29) is deposited on the resultant structure and planarized. At the time, the nitride layer deposited on the back side of the substrate is selectively removed by using the HDP oxide layer as an etch barrier layer.
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