发明名称 |
APPARATUS FOR MANUFACTURING SEMICONDUCTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR |
摘要 |
An apparatus of manufacturing a semiconductor and a manufacturing method thereof are provided to perform rapidly a gas substitution process by supplying a purge gas between a control valve and a process chamber. A plurality of control valves(V1-V4) are installed in front of a process chamber. A purge gas main path(50) is used for supplying a purge gas. A plurality of purge gas sub-paths(51) are branched from the purge gas main path and are connected between the control valves and the process chamber. An orifice is installed at each of the purge gas sub-paths in order to determine a mass flow rate by a pressure of a primary side when a pressure of a primary side to a pressure of a secondary side is more than a predetermined value. A plurality of mass flow controllers(19,52) are installed at the purge gas main path in order to control a total mass flow rate of the purge gas sub-paths.
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申请公布号 |
KR20050033841(A) |
申请公布日期 |
2005.04.13 |
申请号 |
KR20040079758 |
申请日期 |
2004.10.07 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
OKABE, TSUNEYUKI;TAKADO, MAKOTO |
分类号 |
H01L21/02;C23C16/34;C23C16/44;C23C16/455;H01L21/3065;H01L21/31;H01L21/318;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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