发明名称 APPARATUS FOR MANUFACTURING SEMICONDUCTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR
摘要 An apparatus of manufacturing a semiconductor and a manufacturing method thereof are provided to perform rapidly a gas substitution process by supplying a purge gas between a control valve and a process chamber. A plurality of control valves(V1-V4) are installed in front of a process chamber. A purge gas main path(50) is used for supplying a purge gas. A plurality of purge gas sub-paths(51) are branched from the purge gas main path and are connected between the control valves and the process chamber. An orifice is installed at each of the purge gas sub-paths in order to determine a mass flow rate by a pressure of a primary side when a pressure of a primary side to a pressure of a secondary side is more than a predetermined value. A plurality of mass flow controllers(19,52) are installed at the purge gas main path in order to control a total mass flow rate of the purge gas sub-paths.
申请公布号 KR20050033841(A) 申请公布日期 2005.04.13
申请号 KR20040079758 申请日期 2004.10.07
申请人 TOKYO ELECTRON LIMITED 发明人 OKABE, TSUNEYUKI;TAKADO, MAKOTO
分类号 H01L21/02;C23C16/34;C23C16/44;C23C16/455;H01L21/3065;H01L21/31;H01L21/318;(IPC1-7):H01L21/02 主分类号 H01L21/02
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