METHOD FOR FORMING SAMPLE USING ANALYSIS BY TEM

摘要

A method of fabricating a sample for a TEM is provided to form a uniform thin film by overcoming a differential etching rate between a metal pattern and an insulation layer pattern of the sample. A preliminary sample(130) is prepared by attaching a dummy wafer to upper and lower surfaces of a semiconductor substrate. A position of an analysis area to be observed is marked on the upper surface of the preliminary sample(130). Then, an FIB etching is carried out from an upper outer peripheral portion of the preliminary sample towards a center portion of the preliminary sample. The semiconductor substrate includes a metal pattern(80a) and an insulation pattern(90a) of a metal insulator semiconductor capacitor.