| 发明名称 |
FILM FORMING METHOD AND FILM FORMING APPARATUS |
| 摘要 |
A film forming method and a film forming apparatus are provided to form a thin film without a sputtering apparatus by supplying alternately a raw material gas and an auxiliary gas to a process chamber. A raw material gas and an auxiliary gas are continuously supplied to a process chamber(14) in different periods in order to deposit thin films on an upper surface of a processing target(W). After the thin films are deposited on the upper surface of the processing target, the raw material gas and the same gas as the auxiliary gas or the raw material gas and a different gas from the auxiliary gas are simultaneously supplied to the process chamber in order to form a thick film of the thin films.
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| 申请公布号 |
KR20050033820(A) |
申请公布日期 |
2005.04.13 |
| 申请号 |
KR20040079308 |
申请日期 |
2004.10.06 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
FUJITA, HIROTAKE;HASEBE, KAZUHIDE;TOMITA, MASAHIKO;UMEHARA, TAKAHITO |
| 分类号 |
C23C16/455;C23C16/18;C23C16/40;H01L21/02;H01L21/205;H01L21/28;H01L21/283;H01L21/285;H01L21/31;H01L21/316;H01L21/3205;H01L21/768;(IPC1-7):H01L21/205 |
主分类号 |
C23C16/455 |
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