method for fabricating storage capacitor in semiconductor memory device,申请号KR20020041118-传众专利搜索

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发明名称	method for fabricating storage capacitor in semiconductor memory device
摘要
申请公布号	KR100482366(B1)	申请公布日期	2005.04.13
申请号	KR20020041118	申请日期	2002.07.15
申请人		发明人
分类号	H01L27/108;H01L21/02;H01L21/768;H01L21/8242;(IPC1-7):H01L27/108	主分类号	H01L27/108
代理机构		代理人
主权项
地址

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